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Isithinteli seChip se-RF se-RFXX-30CR6363C
Imodeli RFTXX-30CR6363C Amandla 30W Ukumelana XX Ω (10~3000Ω Inokulungiseka) Ukumelana Ukunyamezela ±5% Ubushushu I-Coefficient <150ppm/℃ I-Substrate BeO Resistive Element Thick Film Ubushushu bokusebenza -55 ukuya ku-+150°C (Jonga i-Power De-rating) Iinkqubo ezicetyiswayo zokufakela Ukususwa komlinganiselo Ukuphinda kusebenze Iprofayili P/N Ukubekwa kwesikhundla Sebenzisa ingqalelo ■ Emva kokuba ixesha lokugcina leendawo ezisandula ukuthengwa lidlule iinyanga ezi-6, kufuneka kuqwalaselwe ukudityaniswa ngaphambi kokusetyenziswa. Kucetyiswa ... -
Isithinteli seChip se-RF se-RFXX-30CR2550W
Imodeli RFTXX-30CR2550W Amandla 30 W Ukumelana XX Ω (10~3000Ω Okunokwenziwa ngokwezifiso) Ukumelana Ukunyamezela ±5% Ubushushu I-Coefficient <150ppm/℃ I-Substrate BeO Resistive Element Thick Film Ubushushu bokusebenza -55 ukuya ku-+150°C (Jonga i-Power De-rating) Iinkqubo ezicetyiswayo zokufakela Ukususwa komlinganiselo wombane Iprofayili yokuHlaziya kwakhona P/N Ukubekwa kwesikhundla Sebenzisa ingqalelo ■ Emva kokuba ixesha lokugcina leendawo ezisandula ukuthengwa lidlule iinyanga ezi-6, kufuneka kuqwalaselwe ukudityaniswa ngaphambi kokusetyenziswa. Kucetyiswa... -
Isithinteli seChip se-RF se-RFXX-30CR2550TA
Imodeli RFTXX-30CR2550TA Amandla 30W Ukumelana XX Ω (10~3000Ω Inokulungiseka) Ukumelana Ukunyamezela ±5% Ubushushu I-Coefficient <150ppm/℃ I-Substrate BeO Resistive Element Thick Film Ubushushu bokusebenza -55 ukuya ku-+150°C (Jonga i-Power De-rating) Iinkqubo ezicetyiswayo zokufakela Ukususwa komlinganiselo wombane Iprofayili yokuHlaziya kwakhona P/N Ukubekwa kwesikhundla Sebenzisa ingqalelo ■ Emva kokuba ixesha lokugcina leendawo ezisandula ukuthengwa lidlule iinyanga ezi-6, kufuneka kuqwalaselwe ukudityaniswa ngaphambi kokusetyenziswa. Kucetyiswa... -
I-RFTXX-30RM2006 I-Flanged Resistor I-RF Resistor
Imodeli RFTXX-30RM2006 Amandla 30 W Ukumelana XX Ω (10~2000Ω Okunokwenziwa ngokwezifiso) Ukumelana Ukunyamezela ±5% Umthamo 2.6 PF@100Ω Ubushushu I-Coefficient <150ppm/℃ I-Substrate BeO Cover AL2O3 Mounting Flange I-Brass Lead 99.99% isilivere ecocekileyo I-Resistive Element Thick Film Ubushushu bokusebenza -55 ukuya ku-+150°C (Jonga i-Power De-rating) Umzobo woMgca (Iyunithi: mm) Ubude bentambo ye-lead bungahlangabezana neemfuno zomthengi Ubungakanani Ukunyamezela：5% ngaphandle kokuba kuchazwe ngenye indlela Cebisa... -
Isithinteli seRF se-RFXX-30RM1306
Imodeli RFTXX-30RM1306 Amandla 30 W Ukumelana XX Ω (10~2000Ω Okunokwenziwa ngokwezifiso) Ukumelana Ukunyamezela ±5% Umthamo 2.6 PF@100Ω Ubushushu I-Coefficient <150ppm/℃ I-Substrate BeO Cover AL2O3 Mounting Flange I-Brass Lead 99.99% isilivere ecocekileyo I-Resistive Element Thick Film Ubushushu bokusebenza -55 ukuya ku-+150°C (Jonga i-Power De-rating) Umzobo woMgca (Iyunithi: mm) Ubude bentambo ye-lead bunokuhlangabezana neemfuno zomthengi Ubungakanani Ukunyamezela：5% ngaphandle kokuba kuchazwe ngenye indlela Cebisa... -
I-Dual Junction Isolator
I-dual junction isolator sisixhobo esingasebenziyo esisetyenziswa rhoqo kwiibhendi ze-microwave kunye ne-millimeter-wave frequency ukwahlula imiqondiso ebuyela umva kwisiphelo se-antenna. Yenziwe lulwakhiwo lwe-isolators ezimbini. Ukulahleka kwayo kokufakwa kunye nokwahlulwa kwayo kudla ngokuphindwe kabini kune-isolator enye. Ukuba ukwahlulwa kwe-isolator enye yi-20dB, ukwahlulwa kwe-double-junction isolator kunokuba yi-40dB. I-port VSWR ayitshintshi kakhulu. Kwinkqubo, xa isignali yerediyo idluliselwa ukusuka kwi-input port ukuya kwi-ring junction yokuqala, kuba elinye icala le-ring junction yokuqala lixhotyiswe nge-radio frequency resistor, isignali yayo inokudluliselwa kuphela kwi-input end ye-ring junction yesibini. I-loop junction yesibini iyafana neyokuqala, kunye ne-RF resistor ezifakiweyo, isignali iya kudluliselwa kwi-output port, kwaye ukwahlulwa kwayo kuya kuba sisiphumo sokuhlukaniswa kwe-loop junctions ezimbini. Isignali ebuyela umva evela kwi-output port iya kufunxwa yi-RF resistor kwi-ring junction yesibini. Ngale ndlela, kufezekiswa umlinganiselo omkhulu wokuzahlula phakathi kwee-input kunye nee-output ports, nto leyo enciphisa ngempumelelo ukubonakaliswa kunye nokuphazamiseka kwenkqubo.
Uluhlu lweefrikhwensi ukusuka kwi-10MHz ukuya kwi-40GHz, ukuya kuthi ga kumandla angama-500W.
Usetyenziso lwezomkhosi, lwendawo kunye nolwezorhwebo.
Ukulahleka okuphantsi kokufakwa, ukwahlulwa okuphezulu, ukuphathwa kwamandla aphezulu.
Uyilo olucwangcisiweyo luyafumaneka xa luceliwe.
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I-SMT / SMD Isolator
I-SMD isolator sisixhobo sokwahlukanisa esisetyenziselwa ukupakisha nokufakela kwi-PCB (ibhodi yesekethe eprintiweyo). Zisetyenziswa kakhulu kwiinkqubo zonxibelelwano, izixhobo ze-microwave, izixhobo zerediyo, nakwezinye iindawo. I-SMD isolators zincinci, zikhaphukhaphu, kwaye kulula ukuzifaka, nto leyo ezenza zifaneleke kwizicelo zesekethe ezidityanisiweyo ezinoxinano oluphezulu. Oku kulandelayo kuya kubonelela ngentshayelelo eneenkcukacha kwiimpawu kunye nokusetyenziswa kwe-SMD isolators. Okokuqala, i-SMD isolators ineendlela ezahlukeneyo zokugubungela ibhendi yefrikhwensi. Ngokwesiqhelo zigubungela uluhlu olubanzi lwefrikhwensi, njenge-400MHz-18GHz, ukuhlangabezana neemfuno zefrikhwensi zezicelo ezahlukeneyo. Olu buchule bukhulu bokugubungela ibhendi yefrikhwensi luvumela i-SMD isolators ukuba isebenze kakuhle kwiimeko ezininzi zesicelo.
Uluhlu lweefrikhwensi ukusuka kwi-200MHz ukuya kwi-15GHz.
Usetyenziso lwezomkhosi, lwendawo kunye nolwezorhwebo.
Ukulahleka okuphantsi kokufakwa, ukwahlulwa okuphezulu, ukuphathwa kwamandla aphezulu.
Uyilo olucwangcisiweyo luyafumaneka xa luceliwe.
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Isithinteli seRF se-RF se-RFXX-20RM0904
Imodeli RFTXX-20RM0904 Amandla 20 W Ukumelana XX Ω (10~3000Ω Okunokwenziwa ngokwezifiso) Ukumelana Ukunyamezela ±5% Umthamo 1.2 PF@100Ω Ubushushu I-Coefficient <150ppm/℃ I-Substrate BeO Cover AL2O3 Mounting Flange I-Brass Lead 99.99% isilivere ecocekileyo I-Resistive Element Thick Film Ubushushu bokusebenza -55 ukuya ku-+150°C (Jonga i-Power De-rating) Umzobo woMgca (Iyunithi: mm) Ubude bentambo ye-lead bungahlangabezana neemfuno zomthengi Ubungakanani Ukunyamezela：5% ngaphandle kokuba kuchazwe ngenye indlela Cebisa... -
I-Microstrip Isolator
Ii-Microstrip isolators zizixhobo ze-RF kunye ne-microwave ezisetyenziswa rhoqo ekudluliseni isignali kunye nokwahlulwa kwiisekethe. Isebenzisa ubuchwepheshe befilimu encinci ukwenza isekethe phezu kwe-ferrite yemagnethi ejikelezayo, ize yongeze intsimi yemagnethi ukuze ifezekise oko. Ukufakelwa kwee-microstrip isolators ngokuqhelekileyo kusebenzisa indlela yokutshixa ngesandla imicu yobhedu okanye i-gold wire bonding. Ulwakhiwo lwee-microstrip isolators lulula kakhulu, xa luthelekiswa nee-coaxial kunye nee-embedded isolators. Umahluko ocacileyo kukuba akukho mgodi, kwaye umqhubi we-microstrip isolator wenziwa ngokusebenzisa inkqubo yefilimu encinci (i-vacuum sputtering) ukwenza ipateni eyilwe kwi-rotary ferrite. Emva kokufaka i-electroplating, umqhubi ovelisiweyo uncamathiselwa kwi-rotary ferrite substrate. Ncamathisela umaleko we-insulating medium phezu kwegrafu, kwaye ulungise intsimi yemagnethi kwi-medium. Ngesakhiwo esilula kangaka, kwenziwe i-microstrip isolator.
Uluhlu lweefrikhwensi ukusuka kwi-2.7 ukuya kwi-43GHz
Usetyenziso lwezomkhosi, lwendawo kunye nolwezorhwebo.
Ukulahleka okuphantsi kokufakwa, ukwahlulwa okuphezulu, ukuphathwa kwamandla aphezulu.
Uyilo olucwangcisiweyo luyafumaneka xa luceliwe.
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CT-50W-FH6080-IP65-DINJ-3G DC ~ 3.0GHz Low Intermodulation Termination
Imodeli CT-50W-FH6080-IP65-DINJ-3G Uluhlu lweeFrequency DC~3.0GHz VSWR 1.20 Ubuninzi PIM3 ≥120dBc@2*33dBm Amandla 50W Impedance 50 Ω Uhlobo loqhagamshelwano DIN-M (J) Ibanga elingangeni manzi IP65 Ubungakanani 60×60×80mm Ubushushu bokusebenza -55 ~ +125°C (Jonga ukususwa komlinganiselo wamandla) Umbala Omnyama Ubunzima Malunga ne-410 g Sebenzisa ingqalelo Ukususwa komlinganiselo wamandla P/N Uyilo -
Isithinteli seRF se-RF se-RFXX-20RM1304
Imodeli RFTXX-20RM1304 Amandla 20 W Ukumelana XX Ω (10~3000Ω Okunokwenziwa ngokwezifiso) Ukumelana Ukunyamezela ±5% Umthamo 1.2 PF@100Ω Ubushushu I-Coefficient <150ppm/℃ I-Substrate BeO Cover AL2O3 Mounting Flange I-Brass Lead 99.99% isilivere ecocekileyo I-Resistive Element Thick Film Ubushushu bokusebenza -55 ukuya ku-+150°C (Jonga i-Power De-rating) Umzobo woMgca (Iyunithi: mm) Ubude bentambo ye-lead bungahlangabezana neemfuno zomthengi Ubungakanani Ukunyamezela：5% ngaphandle kokuba kuchazwe ngenye indlela Iziphakamiso... -
