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I-RF Resistor ekhokelwayo ye-RF
Imodeli RFTXX-10RM5025C Amandla 10 W Ukumelana XX Ω~ (10-3000Ω Inokulungiseka) Ukumelana Ukunyamezela ±5% Umthamo 1.8 PF@100Ω Ubushushu I-Coefficient <150ppm/℃ I-Substrate BeO Cover AL2O3 I-Lead 99.99% isilivere ecocekileyo I-Resistive Element Thick Film Ubushushu bokusebenza -55 ukuya ku-+150°C (Jonga i-Power De-rating) Iinkqubo zokufakela ezicetyiswayo Ukususwa komlinganiselo Ukuphinda kusebenze Iprofayili P/N Ukubekwa kwesikhundla Sebenzisa ingqalelo ■ Emva kokuba ixesha lokugcina lezinto ezisandula ukuthengwa lidlule iinyanga ezi-6, ... -
Isithinteli seChip se-RF se-RFXXN-10CR2550C
Imodeli RFTXXN-10CR2550C Amandla 10 W Ukumelana XX Ω (10~3000Ω Okunokwenziwa ngokwezifiso) Ukumelana Ukunyamezela ±5% Ubushushu I-Coefficient <150ppm/℃ I-Substrate AlN Resistive Element Thick Film Ubushushu bokusebenza -55 ukuya ku-+150°C (Jonga i-Power De-rating) Iinkqubo ezicetyiswayo zokufakela Ukususwa komlinganiselo Ukuphinda kusebenze Iprofayili P/N Ukubekwa kwesikhundla Sebenzisa ingqalelo ■ Emva kokuba ixesha lokugcina leendawo ezisandula ukuthengwa lidlule iinyanga ezi-6, kufuneka kuqwalaselwe ukudityaniswa ngaphambi kokusetyenziswa. Kuyacetyiswa... -
Isithinteli seChip se-RF se-RFXX-20CR2550C
Iinkqubo ezicetyiswayo zokufakela i-Power De-rating Reflow Profile P/N Ukubekwa kwe-P/N Ingqwalasela Sebenzisa ■ Emva kokuba ixesha lokugcina leenxalenye ezisandula ukuthengwa lidlule iinyanga ezi-6, kufuneka kuqwalaselwe ukuwelda ngaphambi kokusetyenziswa. Kucetyiswa ukuba kugcinwe emva kokupakisha nge-vacuum. ■Gxobhoza ii-thermal vias nge-PCB uze ugcwalise nge-solder. ■Ukuwelda kwe-Reflow kukhethwa xa kuwelda, jonga i-Reflow curve ■ Ukuze kuhlangatyezwane neemfuno zomzobo, kufuneka kufakwe i-radiator enobukhulu obaneleyo. ■ Ukuba kuyimfuneko,... -
I-RFTXX-30CR2550TA Isithinteli sokuHamba esingaphezulu
Imodeli RFTXX-30CR2550TA Amandla 30W Ukumelana XX Ω (10~3000Ω Inokulungiseka) Ukumelana Ukunyamezela ±5% Ubushushu I-Coefficient <150ppm/℃ I-Substrate BeO Resistive Element Thick Film Ubushushu bokusebenza -55 ukuya ku-+150°C (Jonga i-Power De-rating) Iinkqubo ezicetyiswayo zokufakela Ukususwa komlinganiselo wombane Iprofayili yokuHlaziya kwakhona P/N Ukubekwa kwesikhundla Sebenzisa ingqalelo ■ Emva kokuba ixesha lokugcina leendawo ezisandula ukuthengwa lidlule iinyanga ezi-6, kufuneka kuqwalaselwe ukudityaniswa ngaphambi kokusetyenziswa. Kucetyiswa... -
I-Broadband Isolator
Ii-Broadband zokwahlukanisa zizinto ezibalulekileyo kwiinkqubo zonxibelelwano ze-RF, zibonelela ngeenzuzo ezahlukeneyo ezenza zifaneleke kakhulu kwiinkqubo ezahlukeneyo. Ezi zi-isolators zibonelela nge-broadband coverage ukuqinisekisa ukusebenza kakuhle kuluhlu olubanzi lweefrikhwensi. Ngenxa yokukwazi kwazo ukwahlula imiqondiso, zinokuthintela ukuphazamiseka okuvela kwiisignali zebhendi kwaye zigcine ukuthembeka kwezibonakaliso zebhendi. Enye yezona nzuzo ziphambili zee-broadband zokwahlukanisa kukusebenza kwazo okuphezulu kokwahlukanisa. Ziyahlula ngokufanelekileyo isignali kwisiphelo se-antenna, ziqinisekisa ukuba isignali kwisiphelo se-antenna ayibonakali kwinkqubo. Kwangaxeshanye, ezi zi-isolators zineempawu ezilungileyo zamaza okuma kwezibuko, zinciphisa imiqondiso ebonisiweyo kwaye zigcina ukuhanjiswa kwesignali okuzinzileyo.
Uluhlu lweefrikhwensi ukusuka kwi-56MHz ukuya kwi-40GHz, i-BW ukuya kuthi ga kwi-13.5GHz.
Usetyenziso lwezomkhosi, lwendawo kunye nolwezorhwebo.
Ukulahleka okuphantsi kokufakwa, ukwahlulwa okuphezulu, ukuphathwa kwamandla aphezulu.
Uyilo olucwangcisiweyo luyafumaneka xa luceliwe.
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Isithinteli seRF se-RFXX-30CR6363C esingaphezulu
Imodeli RFTXX-30CR6363C Amandla 30W Ukumelana XX Ω (10~3000Ω Inokulungiseka) Ukumelana Ukunyamezela ±5% Ubushushu I-Coefficient <150ppm/℃ I-Substrate BeO Resistive Element Thick Film Ubushushu bokusebenza -55 ukuya ku-+150°C (Jonga i-Power De-rating) Iinkqubo ezicetyiswayo zokufakela Ukususwa komlinganiselo Ukuphinda kusebenze Iprofayili P/N Ukubekwa kwesikhundla Sebenzisa ingqalelo ■ Emva kokuba ixesha lokugcina leendawo ezisandula ukuthengwa lidlule iinyanga ezi-6, kufuneka kuqwalaselwe ukudityaniswa ngaphambi kokusetyenziswa. Kucetyiswa ... -
Isithinteli seRF se-RFXX-30CR2550W esingaphezulu
Imodeli RFTXX-30CR2550W Amandla 30 W Ukumelana XX Ω (10~3000Ω Okunokwenziwa ngokwezifiso) Ukumelana Ukunyamezela ±5% Ubushushu I-Coefficient <150ppm/℃ I-Substrate BeO Resistive Element Thick Film Ubushushu bokusebenza -55 ukuya ku-+150°C (Jonga i-Power De-rating) Iinkqubo ezicetyiswayo zokufakela Ukususwa komlinganiselo wombane Iprofayili yokuHlaziya kwakhona P/N Ukubekwa kwesikhundla Sebenzisa ingqalelo ■ Emva kokuba ixesha lokugcina leendawo ezisandula ukuthengwa lidlule iinyanga ezi-6, kufuneka kuqwalaselwe ukudityaniswa ngaphambi kokusetyenziswa. Kucetyiswa... -
I-RFTXXN-02CR2550B, Isithinteli seChip, Isithinteli seRF
Imodeli RFTXXN-02CR2550B Amandla 2 W Ukumelana XX Ω (10~3000Ω Okunokwenziwa ngokwezifiso) Ukumelana Ukunyamezela ±5% Ubushushu I-Coefficient <150ppm/℃ I-Substrate AlN Resistive Element Thick Film Ubushushu bokusebenza -55 ukuya ku-+150°C (Jonga i-Power De-rating) Iinkqubo ezicetyiswayo zokufakela Ukususwa komlinganiselo wombane Iprofayili yokuHlaziya kwakhona P/N Ukubekwa kwesikhundla Sebenzisa ingqalelo ■ Emva kokuba ixesha lokugcina leendawo ezisandula ukuthengwa lidlule iinyanga ezi-6, kufuneka kuqwalaselwe ukudityaniswa ngaphambi kokusetyenziswa. Kucetyiswa... -
Isixhobo sokunciphisa i-microstrip esine-sleeve
I-microstrip attenuator ene-sleeve ibhekisa kwi-spiral microstrip attenuation chip enexabiso elithile le-attenuation elifakwe kwityhubhu yesinyithi ejikelezayo enobukhulu obuthile (ityhubhu ngokubanzi yenziwe ngezinto ze-aluminium kwaye ifuna i-oxidation eqhubayo, kwaye ingadityaniswa negolide okanye isilivere njengoko kufuneka).
Uyilo olucwangcisiweyo luyafumaneka xa luceliwe.
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I-RFXXA-02CR3065B Isithinteli seChip Isithinteli seRF
Imodeli RFTXXA-02CR3065B Amandla 2 W Ukumelana XX Ω (10~3000Ω Okunokwenziwa ngokwezifiso) Ukumelana Ukunyamezela ±5% Ubushushu I-Coefficient <150ppm/℃ I-Substrate Al2O3 Resistive Element Thick Film Ubushushu bokusebenza -55 ukuya ku-+150°C (Jonga i-Power De-rating) Iinkqubo ezicetyiswayo zokufakela Ukususwa komlinganiselo wombane Iprofayili yokuHlaziya kwakhona P/N Ukubekwa kwesikhundla Sebenzisa ingqalelo ■ Emva kokuba ixesha lokugcina leendawo ezisandula ukuthengwa lidlule iinyanga ezi-6, kufuneka kuqwalaselwe ukudityaniswa ngaphambi kokusetyenziswa. Kucetyiswa... -
I-RFTXXN-05CR1530C I-Chip Resistor I-RF Resistor
Imodeli RFTXXN-05CR1530C Amandla 5 W Ukumelana XX Ω ~(10~3000Ω Okunokwenziwa ngokwezifiso) Ukumelana Ukunyamezela ±5% Ubushushu I-Coefficient <150ppm/℃ I-Substrate AlN Resistive Element Thick Film Ubushushu bokusebenza -55 ukuya ku-+150°C (Jonga i-Power De-rating) Iinkqubo ezicetyiswayo zokufakela Ukususwa komlinganiselo wombane Iprofayili yokuHlaziya kwakhona P/N Ukubekwa kwesikhundla Sebenzisa ingqalelo ■ Emva kokuba ixesha lokugcina leendawo ezisandula ukuthengwa lidlule iinyanga ezi-6, kufuneka kuqwalaselwe ukudityaniswa ngaphambi kokusetyenziswa. Kuyacetyiswa... -
Isithinteli seChip se-RF se-RFXX-05CR2550W
Imodeli RFTXX-05CR2550W Amandla 5 W Ukumelana XX Ω (10~3000Ω Inokulungiseka) Ukumelana Ukunyamezela ±5% Ubushushu I-Coefficient <150ppm/℃ I-Substrate BeO Resistive Element Thick Film Ubushushu bokusebenza -55 ukuya ku-+150°C (Jonga i-Power De-rating) Iinkqubo ezicetyiswayo zokufakela Ukususwa komlinganiselo wombane Iprofayili yokuHlaziya kwakhona P/N Ukubekwa kwesikhundla Sebenzisa ingqalelo ■ Emva kokuba ixesha lokugcina leendawo ezisandula ukuthengwa lidlule iinyanga ezi-6, kufuneka kuqwalaselwe ukudityaniswa ngaphambi kokusetyenziswa. Kucetyiswa ...
