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I-RFXXN-60RM1306 I-Flanged Resistor I-RF Resistor
Imodeli RFTXXN-60RM1306 Amandla 60 W Ukumelana XX Ω (10~2000Ω Okunokwenziwa ngokwezifiso) Ukumelana Ukunyamezela ±5% Umthamo 2.9 PF@100Ω Ubushushu I-Coefficient <150ppm/℃ I-Substrate ALN Cover AL2O3 Mounting Flange I-Brass Lead 99.99% isilivere ecocekileyo I-Resistive Element Thick Film Ubushushu bokusebenza -55 ukuya ku-+150°C (Jonga i-Power De-rating) Umzobo woMgca (Iyunithi: mm) Ubude bentambo ye-lead bungahlangabezana neemfuno zomthengi Ubungakanani Ukunyamezela：5% ngaphandle kokuba kuchazwe ngenye indlela Iingcebiso... -
I-RFTXX-60RM2006F Flanged Resistor I-RF Resistor
Imodeli RFTXX-60RM2006F Amandla 60 W Ukumelana XX Ω (10~2000Ω Okunokwenziwa ngokwezifiso) Ukumelana Ukunyamezela ±5% Umthamo 1.2 PF@100Ω Ubushushu I-Coefficient <150ppm/℃ I-Substrate BeO Cover AL2O3 Mounting Flange I-Brass Lead 99.99% isilivere ecocekileyo I-Resistive Element Thick Film Ubushushu bokusebenza -55 ukuya ku-+150°C (Jonga i-Power De-rating) Umzobo woMgca (Iyunithi: mm) Ubude bentambo ye-lead bungahlangabezana neemfuno zomthengi Ubungakanani Ukunyamezela：5% ngaphandle kokuba kuchazwe ngenye indlela Iziphakamiso... -
Isithinteli seRF se-RF se-RFXX-05CR2550B
Imodeli RFTXX-05CR2550B Amandla 5 W Ukumelana XX Ω (10~3000Ω Inokulungiseka) Ukumelana Ukunyamezela ±5% Ubushushu I-Coefficient <150ppm/℃ I-Substrate BeO Resistive Element Thick Film Ubushushu bokusebenza -55 ukuya ku-+150°C (Jonga i-Power De-rating) Umzobo we-Outline (Iyunithi: mm) Iinkqubo zokufakela ezicetyiswayo Ukususwa komlinganiselo wombane Iprofayili yokuHlaziya kwakhona P/N Ukubekwa kwesikhundla Sebenzisa ingqalelo ■ Emva kokuba ixesha lokugcina leendawo ezisandula ukuthengwa lidlule iinyanga ezi-6, kufuneka kuqwalaselwe i-weldability... -
Isithinteli esikhokelwayo se-RF se-RFXX-250RM1313K
Imodeli RFTXX-250RM1313K Amandla 250 W Ukumelana XX Ω~ (10-1000Ω Okunokwenziwa ngokwezifiso) Ukumelana Ukunyamezela ±5% Umthamo 2.0 PF@100Ω Ubushushu I-Coefficient <150ppm/℃ I-Substrate BeO Cover AL2O3 Lead Copper silver plating Resistive Element Thick Film Ubushushu bokusebenza -55 ukuya ku-+150°C (Jonga i-Power De-rating) Iinkqubo zokufakela ezicetyiswayo Ukususwa komlinganiselo wombane Iprofayili yokuHlaziya kwakhona P/N Uyilo Sebenzisa ingqalelo ■ Emva kokuba ixesha lokugcina lezinto ezisandula ukuthengwa lidlule iinyanga ezi-6... -
I-RF Resistor ekhokelwayo ye-RF
Imodeli RFTXX-10RM5025C Amandla 10 W Ukumelana XX Ω~ (10-3000Ω Inokulungiseka) Ukumelana Ukunyamezela ±5% Umthamo 1.8 PF@100Ω Ubushushu I-Coefficient <150ppm/℃ I-Substrate BeO Cover AL2O3 I-Lead 99.99% isilivere ecocekileyo I-Resistive Element Thick Film Ubushushu bokusebenza -55 ukuya ku-+150°C (Jonga i-Power De-rating) Iinkqubo zokufakela ezicetyiswayo Ukususwa komlinganiselo Ukuphinda kusebenze Iprofayili P/N Ukubekwa kwesikhundla Sebenzisa ingqalelo ■ Emva kokuba ixesha lokugcina lezinto ezisandula ukuthengwa lidlule iinyanga ezi-6, ... -
Isithinteli seChip se-RF se-RFXXN-10CR2550C
Imodeli RFTXXN-10CR2550C Amandla 10 W Ukumelana XX Ω (10~3000Ω Okunokwenziwa ngokwezifiso) Ukumelana Ukunyamezela ±5% Ubushushu I-Coefficient <150ppm/℃ I-Substrate AlN Resistive Element Thick Film Ubushushu bokusebenza -55 ukuya ku-+150°C (Jonga i-Power De-rating) Iinkqubo ezicetyiswayo zokufakela Ukususwa komlinganiselo Ukuphinda kusebenze Iprofayili P/N Ukubekwa kwesikhundla Sebenzisa ingqalelo ■ Emva kokuba ixesha lokugcina leendawo ezisandula ukuthengwa lidlule iinyanga ezi-6, kufuneka kuqwalaselwe ukudityaniswa ngaphambi kokusetyenziswa. Kuyacetyiswa... -
Isithinteli seChip se-RF se-RFXX-20CR2550C
Iinkqubo ezicetyiswayo zokufakela i-Power De-rating Reflow Profile P/N Ukubekwa kwe-P/N Ingqwalasela Sebenzisa ■ Emva kokuba ixesha lokugcina leenxalenye ezisandula ukuthengwa lidlule iinyanga ezi-6, kufuneka kuqwalaselwe ukuwelda ngaphambi kokusetyenziswa. Kucetyiswa ukuba kugcinwe emva kokupakisha nge-vacuum. ■Gxobhoza ii-thermal vias nge-PCB uze ugcwalise nge-solder. ■Ukuwelda kwe-Reflow kukhethwa xa kuwelda, jonga i-Reflow curve ■ Ukuze kuhlangatyezwane neemfuno zomzobo, kufuneka kufakwe i-radiator enobukhulu obaneleyo. ■ Ukuba kuyimfuneko,... -
I-RFTXX-30CR2550TA Isithinteli sokuHamba esingaphezulu
Imodeli RFTXX-30CR2550TA Amandla 30W Ukumelana XX Ω (10~3000Ω Inokulungiseka) Ukumelana Ukunyamezela ±5% Ubushushu I-Coefficient <150ppm/℃ I-Substrate BeO Resistive Element Thick Film Ubushushu bokusebenza -55 ukuya ku-+150°C (Jonga i-Power De-rating) Iinkqubo ezicetyiswayo zokufakela Ukususwa komlinganiselo wombane Iprofayili yokuHlaziya kwakhona P/N Ukubekwa kwesikhundla Sebenzisa ingqalelo ■ Emva kokuba ixesha lokugcina leendawo ezisandula ukuthengwa lidlule iinyanga ezi-6, kufuneka kuqwalaselwe ukudityaniswa ngaphambi kokusetyenziswa. Kucetyiswa... -
Isithinteli seRF se-RFXX-30CR6363C esingaphezulu
Imodeli RFTXX-30CR6363C Amandla 30W Ukumelana XX Ω (10~3000Ω Inokulungiseka) Ukumelana Ukunyamezela ±5% Ubushushu I-Coefficient <150ppm/℃ I-Substrate BeO Resistive Element Thick Film Ubushushu bokusebenza -55 ukuya ku-+150°C (Jonga i-Power De-rating) Iinkqubo ezicetyiswayo zokufakela Ukususwa komlinganiselo Ukuphinda kusebenze Iprofayili P/N Ukubekwa kwesikhundla Sebenzisa ingqalelo ■ Emva kokuba ixesha lokugcina leendawo ezisandula ukuthengwa lidlule iinyanga ezi-6, kufuneka kuqwalaselwe ukudityaniswa ngaphambi kokusetyenziswa. Kucetyiswa ... -
Isithinteli seRF se-RFXX-30CR2550W esingaphezulu
Imodeli RFTXX-30CR2550W Amandla 30 W Ukumelana XX Ω (10~3000Ω Okunokwenziwa ngokwezifiso) Ukumelana Ukunyamezela ±5% Ubushushu I-Coefficient <150ppm/℃ I-Substrate BeO Resistive Element Thick Film Ubushushu bokusebenza -55 ukuya ku-+150°C (Jonga i-Power De-rating) Iinkqubo ezicetyiswayo zokufakela Ukususwa komlinganiselo wombane Iprofayili yokuHlaziya kwakhona P/N Ukubekwa kwesikhundla Sebenzisa ingqalelo ■ Emva kokuba ixesha lokugcina leendawo ezisandula ukuthengwa lidlule iinyanga ezi-6, kufuneka kuqwalaselwe ukudityaniswa ngaphambi kokusetyenziswa. Kucetyiswa... -
I-RFTXXN-02CR2550B, Isithinteli seChip, Isithinteli seRF
Imodeli RFTXXN-02CR2550B Amandla 2 W Ukumelana XX Ω (10~3000Ω Okunokwenziwa ngokwezifiso) Ukumelana Ukunyamezela ±5% Ubushushu I-Coefficient <150ppm/℃ I-Substrate AlN Resistive Element Thick Film Ubushushu bokusebenza -55 ukuya ku-+150°C (Jonga i-Power De-rating) Iinkqubo ezicetyiswayo zokufakela Ukususwa komlinganiselo wombane Iprofayili yokuHlaziya kwakhona P/N Ukubekwa kwesikhundla Sebenzisa ingqalelo ■ Emva kokuba ixesha lokugcina leendawo ezisandula ukuthengwa lidlule iinyanga ezi-6, kufuneka kuqwalaselwe ukudityaniswa ngaphambi kokusetyenziswa. Kucetyiswa... -
I-RFXXA-02CR3065B Isithinteli seChip Isithinteli seRF
Imodeli RFTXXA-02CR3065B Amandla 2 W Ukumelana XX Ω (10~3000Ω Okunokwenziwa ngokwezifiso) Ukumelana Ukunyamezela ±5% Ubushushu I-Coefficient <150ppm/℃ I-Substrate Al2O3 Resistive Element Thick Film Ubushushu bokusebenza -55 ukuya ku-+150°C (Jonga i-Power De-rating) Iinkqubo ezicetyiswayo zokufakela Ukususwa komlinganiselo wombane Iprofayili yokuHlaziya kwakhona P/N Ukubekwa kwesikhundla Sebenzisa ingqalelo ■ Emva kokuba ixesha lokugcina leendawo ezisandula ukuthengwa lidlule iinyanga ezi-6, kufuneka kuqwalaselwe ukudityaniswa ngaphambi kokusetyenziswa. Kucetyiswa...
