Iimveliso
Ukupheliswa kweChip
Ukupheliswa kweChip (Uhlobo A)
Ukupheliswa kweChip
Iinkcukacha zobugcisa eziphambili:
Amandla Alinganisiweyo: 10-500W ；
Izixhobo ze-substrate: BeO、AlN、Al2O3
Ixabiso lokumelana eliqingqiweyo: 50Ω
Ukunyamezelana kokumelana: ± 5%, ± 2%, ± 1%
i-emperature coefficient: <150ppm/℃
Ubushushu bokusebenza: -55～+150℃
Umgangatho we-ROHS: Uhambelana ne
Umgangatho osebenzayo: Q/RFTYTR001-2022
| Amandla(W) | Izihlandlo | Ubukhulu (iyunithi: mm) | I-substrateIzinto eziphathekayo | Uqwalaselo | Iphepha leDatha (iPDF) | ||||||
| A | B | C | D | E | F | G | |||||
| 10W | 6GHz | 2.5 | 5.0 | 0.7 | 2.4 | / | 1.0 | 2.0 | I-AlN | UMZOBO 2 | RFT50N-10CT2550 |
| 10GHz | 4.0 | 4.0 | 1.0 | 1.27 | 2.6 | 0.76 | 1.40 | I-BeO | UMZOBO 1 | RFT50-10CT0404 | |
| 12W | 12GHz | 1.5 | 3 | 0.38 | 1.4 | / | 0.46 | 1.22 | I-AlN | UMZOBO 2 | RFT50N-12CT1530 |
| 20W | 6GHz | 2.5 | 5.0 | 0.7 | 2.4 | / | 1.0 | 2.0 | I-AlN | UMZOBO 2 | RFT50N-20CT2550 |
| 10GHz | 4.0 | 4.0 | 1.0 | 1.27 | 2.6 | 0.76 | 1.40 | I-BeO | UMZOBO 1 | RFT50-20CT0404 | |
| 30W | 6GHz | 6.0 | 6.0 | 1.0 | 1.3 | 3.3 | 0.76 | 1.8 | I-AlN | UMZOBO 1 | RFT50N-30CT0606 |
| 60W | 6GHz | 6.0 | 6.0 | 1.0 | 1.3 | 3.3 | 0.76 | 1.8 | I-AlN | UMZOBO 1 | RFT50N-60CT0606 |
| 100W | 5GHz | 6.35 | 6.35 | 1.0 | 1.3 | 3.3 | 0.76 | 1.8 | I-BeO | UMZOBO 1 | RFT50-100CT6363 |
Ukupheliswa kweChip (Uhlobo B)
Ukupheliswa kweChip
Iinkcukacha zobugcisa eziphambili:
Amandla Alinganisiweyo: 10-500W ；
Izixhobo ze-substrate: BeO, AlN
Ixabiso lokumelana eliqingqiweyo: 50Ω
Ukunyamezelana kokumelana: ± 5%, ± 2%, ± 1%
i-emperature coefficient: <150ppm/℃
Ubushushu bokusebenza: -55～+150℃
Umgangatho we-ROHS: Uhambelana ne
Umgangatho osebenzayo: Q/RFTYTR001-2022
Ubungakanani bejoyinti yesolder: jonga iphepha leenkcukacha
(ingenziwa ngokwezifiso ngokweemfuno zabathengi)
| Amandla(W) | Izihlandlo | Ubukhulu (iyunithi: mm) | I-substrateIzinto eziphathekayo | Iphepha leDatha (iPDF) | ||||
| A | B | C | D | H | ||||
| 10W | 6GHz | 4.0 | 4.0 | 1.1 | 0.9 | 1.0 | I-AlN | RFT50N-10WT0404 |
| 8GHz | 4.0 | 4.0 | 1.1 | 0.9 | 1.0 | I-BeO | RFT50-10WT0404 | |
| 10GHz | 5.0 | 2.5 | 1.1 | 0.6 | 1.0 | I-BeO | RFT50-10WT5025 | |
| 20W | 6GHz | 4.0 | 4.0 | 1.1 | 0.9 | 1.0 | I-AlN | RFT50N-20WT0404 |
| 8GHz | 4.0 | 4.0 | 1.1 | 0.9 | 1.0 | I-BeO | RFT50-20WT0404 | |
| 10GHz | 5.0 | 2.5 | 1.1 | 0.6 | 1.0 | I-BeO | RFT50-20WT5025 | |
| 30W | 6GHz | 6.0 | 6.0 | 1.1 | 1.1 | 1.0 | I-AlN | RFT50N-30WT0606 |
| 60W | 6GHz | 6.0 | 6.0 | 1.1 | 1.1 | 1.0 | I-AlN | RFT50N-60WT0606 |
| 100W | 3GHz | 8.9 | 5.7 | 1.8 | 1.2 | 1.0 | I-AlN | RFT50N-100WT8957 |
| 6GHz | 8.9 | 5.7 | 1.8 | 1.2 | 1.0 | I-AlN | RFT50N-100WT8957B | |
| 8GHz | 9.0 | 6.0 | 1.4 | 1.1 | 1.5 | I-BeO | RFT50N-100WT0906C | |
| 150W | 3GHz | 6.35 | 9.5 | 2.0 | 1.1 | 1.0 | I-AlN | RFT50N-150WT6395 |
| 9.5 | 9.5 | 2.4 | 1.5 | 1.0 | I-BeO | RFT50-150WT9595 | ||
| 4GHz | 10.0 | 10.0 | 2.6 | 1.7 | 1.5 | I-BeO | RFT50-150WT1010 | |
| 6GHz | 10.0 | 10.0 | 2.6 | 1.7 | 1.5 | I-BeO | RFT50-150WT1010B | |
| 200W | 3GHz | 9.55 | 5.7 | 2.4 | 1.0 | 1.0 | I-AlN | RFT50N-200WT9557 |
| 9.5 | 9.5 | 2.4 | 1.5 | 1.0 | I-BeO | RFT50-200WT9595 | ||
| 4GHz | 10.0 | 10.0 | 2.6 | 1.7 | 1.5 | I-BeO | RFT50-200WT1010 | |
| 10GHz | 12.7 | 12.7 | 2.5 | 1.7 | 2.0 | I-BeO | RFT50-200WT1313B | |
| 250W | 3GHz | 12.0 | 10.0 | 1.5 | 1.5 | 1.5 | I-BeO | RFT50-250WT1210 |
| 10GHz | 12.7 | 12.7 | 2.5 | 1.7 | 2.0 | I-BeO | RFT50-250WT1313B | |
| 300W | 3GHz | 12.0 | 10.0 | 1.5 | 1.5 | 1.5 | I-BeO | RFT50-300WT1210 |
| 10GHz | 12.7 | 12.7 | 2.5 | 1.7 | 2.0 | I-BeO | RFT50-300WT1313B | |
| 400W | 2GHz | 12.7 | 12.7 | 2.5 | 1.7 | 2.0 | I-BeO | RFT50-400WT1313 |
| 500W | 2GHz | 12.7 | 12.7 | 2.5 | 1.7 | 2.0 | I-BeO | RFT50-500WT1313 |
Isishwankathelo
Ii-resistors ze-chip terminal zifuna ukukhetha ubungakanani obufanelekileyo kunye nezixhobo ze-substrate ngokusekelwe kumandla ahlukeneyo kunye neemfuno ze-frequency. Izinto ze-substrate ngokubanzi zenziwe nge-beryllium oxide, i-aluminium nitride, kunye ne-aluminium oxide ngokusebenzisa ukuxhathisa kunye nokuprinta kwesekethe.
Ii-resistors ze-chip terminal zinokwahlulwa zibe ziifilimu ezincinci okanye iifilimu ezixineneyo, ezinobukhulu obahlukeneyo kunye neendlela ezahlukeneyo zamandla. Singaqhagamshelana nathi ukuze sifumane izisombululo ezenzelwe wena ngokweemfuno zabathengi.
Itekhnoloji yokuxhoma umphezulu (i-SMT) yindlela eqhelekileyo yokupakisha izinto ze-elektroniki, esetyenziswa kakhulu ekuxhomeni umphezulu weebhodi zesekethe. Ii-Chip resistors luhlobo olunye lwe-resistor olusetyenziselwa ukunciphisa umbane, ukulawula i-circuit impedance, kunye ne-local voltage.
Ngokungafaniyo nee-socket resistor zemveli, ii-patch terminal resistor akufuneki ziqhagamshelwe kwibhodi yesekethe ngee-sockets, kodwa zidityaniswa ngokuthe ngqo kumphezulu webhodi yesekethe. Olu hlobo lokupakisha lunceda ukuphucula ubuncinci, ukusebenza, kunye nokuthembeka kweebhodi zesekethe.
Ii-resistors ze-chip terminal zifuna ukukhetha ubungakanani obufanelekileyo kunye nezixhobo ze-substrate ngokusekelwe kumandla ahlukeneyo kunye neemfuno ze-frequency. Izinto ze-substrate ngokubanzi zenziwe nge-beryllium oxide, i-aluminium nitride, kunye ne-aluminium oxide ngokusebenzisa ukuxhathisa kunye nokuprinta kwesekethe.
Ii-resistors ze-chip terminal zinokwahlulwa zibe ziifilimu ezincinci okanye iifilimu ezixineneyo, ezinobukhulu obahlukeneyo kunye neendlela ezahlukeneyo zamandla. Singaqhagamshelana nathi ukuze sifumane izisombululo ezenzelwe wena ngokweemfuno zabathengi.
Inkampani yethu isebenzisa isoftware ye-HFSS yamazwe ngamazwe yoyilo lobungcali kunye nophuhliso lokulinganisa. Kwenziwe uvavanyo olukhethekileyo lokusebenza kwamandla ukuqinisekisa ukuthembeka kwamandla. Kusetyenziswe ii-analyzer zenethiwekhi ezichanekileyo ukuvavanya nokuvavanya izalathisi zayo zokusebenza, nto leyo ekhokelele ekusebenzeni okuthembekileyo.
Inkampani yethu iphuhlise kwaye iyila ii-terminal resistor ezifakelwa kumphezulu ezinobukhulu obahlukeneyo, amandla ahlukeneyo (njenge-2W-800W terminal resistor ezinamandla ahlukeneyo), kunye nee-frequency ezahlukeneyo (ezifana nee-terminal resistor ze-1G-18GHz). Bamkelekile abathengi ukuba bakhethe kwaye basebenzise ngokweemfuno ezithile zokusetyenziswa.
Iiresistor zesiphelo ezingenalo i-lead ezifakwe kumphezulu, ezaziwa ngokuba ziiresistor ezingenalo i-lead ezifakwe kumphezulu, ziyinxalenye ye-elektroniki encinci. Uphawu lwayo kukuba ayinazo ii-lead zemveli, kodwa ithengiswa ngokuthe ngqo kwibhodi yesekethe ngetekhnoloji ye-SMT.
Olu hlobo lwe-resistor ludla ngokuba neengenelo zobukhulu obuncinci kunye nobunzima obulula, okuvumela uyilo lwebhodi yesekethe enoxinano oluphezulu, ukonga indawo, kunye nokuphucula ukuhlanganiswa kwenkqubo iyonke. Ngenxa yokungabikho kwee-leads, zikwanayo ne-parasitic inductance ephantsi kunye ne-capacitance, nto leyo ibalulekileyo kwizicelo ze-high-frequency, ukunciphisa ukuphazamiseka kwesignali kunye nokuphucula ukusebenza kwesekethe.
Inkqubo yokufaka ii-resistors ze-terminal ezingenalo i-lead ze-SMT ilula kakhulu, kwaye ukufakwa kwebhetshi kungenziwa ngezixhobo ezizenzekelayo ukuphucula ukusebenza kakuhle kwemveliso. Ukusebenza kwayo kokusasaza ubushushu kulungile, okunokunciphisa ngempumelelo ubushushu obuveliswa yi-resistor ngexesha lokusebenza kunye nokuphucula ukuthembeka.
Ukongeza, olu hlobo lwe-resistor luchaneke kakhulu kwaye lunokuhlangabezana neemfuno ezahlukeneyo zesicelo ezinamaxabiso aqinileyo okuxhathisa. Zisetyenziswa kakhulu kwiimveliso ze-elektroniki, ezifana nezinto ezingasebenziyo ii-RF isolators. Ii-Couplers, imithwalo ye-coaxial, kunye nezinye iindawo.
Lilonke, ii-resistors ze-terminal ezingenalo i-lead ze-SMT ziye zaba yinxalenye ebalulekileyo yoyilo lwe-elektroniki lwanamhlanje ngenxa yobukhulu bazo obuncinci, ukusebenza kakuhle kwamaza aphezulu, kunye nokulula ukuzifaka.
