Iimveliso
Isithinteli seChip se-RF se-RFXXN-10CR2550TA
| Imodeli | I-RFTXXN-10CR2550TA |
| Amandla | 10 W |
| Ukuchasa | XX Ω (10~3000Ω Lungiselela) |
| Ukunyamezela Ukumelana | ±5% |
| I-Coefficient yobushushu | <150ppm/℃ |
| I-substrate | I-AlN |
| Into Ethintelayo | Ifilimu Engqindilili |
| Ubushushu bokusebenza | -55 ukuya ku +150°C (Jonga i-Power De-rating) |
Iinkqubo zokufakela ezicetyiswayo
Ukususwa kovavanyo lwamandla
Iprofayili Yokuphinda Ubuye
Utyumbo lwe-P/N
Sebenzisa ingqalelo
■ Emva kokuba ixesha lokugcina izinto ezisandula ukuthengwa lidlule iinyanga ezi-6, kufuneka kuqwalaselwe indlela yokuzincamathelisa ngaphambi kokuba zisetyenziswe. Kucetyiswa ukuba zigcinwe emva kokupakishwa nge-vacuum.
■Gqobhoza ii-thermal vias nge-PCB uze ugcwalise nge-solder.
■Ukuwelda kwe-Reflow kukhethwa xa kuwelda, jonga i-Reflow curve
■ Ukuze kuhlangatyezwane neemfuno zomzobo, kufuneka kufakwe i-radiator enobukhulu obaneleyo.
■ Ukuba kuyimfuneko, yongeza ukupholisa umoya okanye ukupholisa ngamanzi.
Cacisa:
■Uyilo oluqhelekileyo olufumanekayo lweRF Attenuators kunye neRF Resistors kunye neRF Terminations.
