Iimveliso
I-Microstrip Attenuator
Ishiti yedatha
| I-RFTYT Microstrip Attenuator | |||||||
| Amandla | Ngokuphindaphindiweyo.Uluhlu (GHz) | I-Substrate Dimension (mm) | Izinto eziphathekayo | Ixabiso lokuthotywa (dB) | Icwecwe leDatha (PDF) | ||
| W | L | H | |||||
| 2W | DC-12.4 | 5.2 | 6.35 | 0.5 | Al2O3 | 01-10, 15, 20, 25, 30 | RFTXXA-02MA5263-12.4 |
| DC-18.0 | 4.4 | 3.0 | 0.38 | Al2O3 | 01-10 | RFTXXA-02MA4430-18 | |
| 4.4 | 6.35 | 0.38 | Al2O3 | 15, 20, 25, 30 | RFTXXA-02MA4463-18 | ||
| 5W | DC-12.4 | 5.2 | 6.35 | 0.5 | BeO | 01-10, 15, 20, 25, 30 | RFTXX-05MA5263-12.4 |
| DC-18.0 | 4.5 | 6.35 | 0.5 | BeO | 01-10, 15, 20, 25, 30 | RFTXX-05MA4563-18 | |
| 10W | DC-12.4 | 5.2 | 6.35 | 0.5 | BeO | 01-10, 15, 20, 25, 30 | RFTXX-10MA5263-12.4 |
| DC-18.0 | 5.4 | 10.0 | 0.5 | BeO | 01-10, 15, 17, 20, 25, 27, 30 | RFTXX-10MA5410-18 | |
| 20W | DC-10.0 | 9.0 | 19.0 | 0.5 | BeO | 01-10, 15, 20, 25, 30, 36.5, 40, 50 | RFTXX-20MA0919-10 |
| DC-18.0 | 5.4 | 22.0 | 0.5 | BeO | 01-10, 15, 20, 25, 30, 35, 40, 50, 60 | RFTXX-20MA5422-18 | |
| 30W | DC-10.0 | 11.0 | 32.0 | 0.7 | BeO | 01-10, 15, 20, 25, 30 | RFTXX-30MA1132-10 |
| 50W | DC-4.0 | 25.4 | 25.4 | 3.2 | BeO | 03, 06, 10, 15, 20, 30 | RFTXX-50MA2525-4 |
| DC-6.0 | 12.0 | 40.0 | 1.0 | BeO | 01-30, 40, 50, 60 | RFTXX-50MA1240-6 | |
| DC-8.0 | 12.0 | 40.0 | 1.0 | BeO | 01-30, 40 | RFTXX-50MA1240-8 | |
Isishwankathelo
I-Microstrip attenuator luhlobo lwe-chip yokunciphisa.Okubizwa ngokuba yi "spin on" sisakhiwo sofakelo.Ukusebenzisa olu hlobo lwe-chip attenuation, isivalo somoya setyhula okanye isikwele siyadingeka, esikumacala omabini e-substrate.
Iileyile ezimbini zesilivere kumacala omabini e-substrate kwicala lobude kufuneka zibekwe phantsi.
Ngexesha lokusetyenziswa, inkampani yethu inokubonelela abathengi ngeekhava zomoya zobukhulu obahlukeneyo kunye nee-frequencies simahla.
Abasebenzisi banokucubungula imikhono ngokobukhulu bekhava yomoya, kwaye i-groove yomhlaba yomkhono kufuneka ibe banzi kunobunzima be-substrate.
Emva koko, umgca we-elastic oqhubekileyo uhlanganiswe kwimiphetho emibini yokumisa ye-substrate kwaye ifakwe kwi-sleeve.
I-periphery yangaphandle ye-sleeve ihambelana ne-heat sink ehambelana namandla.
Iziqhagamshelo kumacala omabini ziqhagamshelwe kumngxunya ngemicu, kwaye unxibelelwano phakathi kwesinxibelelanisi kunye nepleyiti ejikelezayo ye-microstrip attenuation yenziwe ngepini ye-elastic, enxibelelana ne-elastic kunye necala lecala lepleyiti yokunciphisa.
I-Rotary microstrip attenuator yimveliso enezona mpawu ziphezulu zefrikhwensi kuzo zonke iitshiphusi, kwaye lolona khetho luphambili lokwenza i-high-frequency attenuators.
Umgaqo wokusebenza we-microstrip attenuator usekelwe ikakhulu kwindlela ebonakalayo yokunciphisa umqondiso.Inciphisa imiqondiso ye-microwave ngexesha lokudluliselwa kwi-chip ngokukhetha izinto ezifanelekileyo kunye noyilo lwezakhiwo.Ngokubanzi, iichips zokuthomalalisa zisebenzisa iindlela ezinje ngokufunxa, ukusasaza, okanye ukubonakalisa ukuthomalalisa.Ezi ndlela zinokulawula ukuthotywa kunye nokuphendula rhoqo ngokuhlengahlengisa iiparamitha zezinto ze-chip kunye nesakhiwo.
Ubume be-microstrip attenuators ngokuqhelekileyo bubandakanya iintambo zothumelo lwe-microwave kunye nothungelwano oluhambelanayo oluhambelanayo.Imigca yothumelo lweMicrowave yimijelo yokuhanjiswa komqondiso, kwaye izinto ezinjengokulahleka kothumelo kunye nokulahleka kokubuya kufuneka ziqwalaselwe kuyilo.Inethiwekhi ehambelana ne-impedance isetyenziselwa ukuqinisekisa ukutshatyalaliswa okupheleleyo komqondiso, ukubonelela ngexabiso elichanekileyo lokunciphisa.
Isixa sokunciphisa i-microstrip attenuator esiyinikezelayo sisisigxina kwaye sihlala sihlala, kwaye sinozinzo kunye nokuthembeka, okungasetyenziswa kwiimeko apho uhlengahlengiso rhoqo ayimfuneko.Ii-attenuators ezisisigxina zisetyenziswa kakhulu kwiinkqubo ezifana ne-radar, unxibelelwano lwesathelayithi, kunye nomlinganiselo we-microwave.
