| I-RFTYT Microstrip Attenuator | |||||||
| Amandla | Uluhlu lweeFreq. (GHz) | Ubukhulu be-substrate (mm) | Izinto eziphathekayo | Ixabiso lokuncitshiswa (dB) | Iphepha leDatha (iPDF) | ||
| W | L | H | |||||
| 2W | DC-12.4 | 5.2 | 6.35 | 0.5 | Al2O3 | 01-10, 15, 20, 25, 30 | I-RFTXXA-02MA5263-12.4 |
| DC-18.0 | 4.4 | 3.0 | 0.38 | Al2O3 | 01-10 | I-RFTXXA-02MA4430-18 | |
| 4.4 | 6.35 | 0.38 | Al2O3 | 15, 20, 25, 30 | I-RFTXXA-02MA4463-18 | ||
| 5W | DC-12.4 | 5.2 | 6.35 | 0.5 | I-BeO | 01-10, 15, 20, 25, 30 | I-RFTXX-05MA5263-12.4 |
| DC-18.0 | 4.5 | 6.35 | 0.5 | I-BeO | 01-10, 15, 20, 25, 30 | I-RFTXX-05MA4563-18 | |
| 10W | DC-12.4 | 5.2 | 6.35 | 0.5 | I-BeO | 01-10, 15, 20, 25, 30 | I-RFTXX-10MA5263-12.4 |
| DC-18.0 | 5.4 | 10.0 | 0.5 | I-BeO | 01-10, 15, 17, 20, 25, 27, 30 | I-RFTXX-10MA5410-18 | |
| 20W | DC-10.0 | 9.0 | 19.0 | 0.5 | I-BeO | 01-10, 15, 20, 25, 30, 36.5, 40, 50 | I-RFTXX-20MA0919-10 |
| DC-18.0 | 5.4 | 22.0 | 0.5 | I-BeO | 01-10, 15, 20, 25, 30, 35, 40, 50, 60 | I-RFTXX-20MA5422-18 | |
| 30W | DC-10.0 | 11.0 | 32.0 | 0.7 | I-BeO | 01-10, 15, 20, 25, 30 | I-RFTXX-30MA1132-10 |
| 50W | DC-4.0 | 25.4 | 25.4 | 3.2 | I-BeO | 03,06,10,15,20,30 | I-RFTXX-50MA2525-4 |
| DC-6.0 | 12.0 | 40.0 | 1.0 | I-BeO | 01-30, 40, 50, 60 | I-RFTXX-50MA1240-6 | |
| DC-8.0 | 12.0 | 40.0 | 1.0 | I-BeO | 01-30,40 | I-RFTXX-50MA1240-8 | |
I-Microstrip attenuator luhlobo lwe-attenuation chip. Oko kubizwa ngokuba yi-"spin on" sisakhiwo sokufakela. Ukuze usebenzise olu hlobo lwe-attenuation chip, kufuneka isigqubuthelo somoya esijikelezayo okanye esisikwere, esifumaneka kumacala omabini e-substrate.
Iileya ezimbini zesilivere kumacala omabini esiseko kwicala lobude kufuneka zibekwe phantsi.
Ngexesha lokusetyenziswa, inkampani yethu inokubonelela abathengi ngee-air cover zobukhulu obahlukeneyo kunye nee-frequency zasimahla.
Abasebenzisi banokuyicubungula imikhono ngokobukhulu besigqubuthelo somoya, kwaye umngxuma wokumisa wemikhono kufuneka ube mkhulu kunobukhulu besiseko.
Emva koko, umphetho we-elastic oqhubayo ujikeleziswa kwimiphetho emibini yokumisa ye-substrate uze ufakwe kwi-sleeve.
Umda ongaphandle wesingxobo uhambelana nesinki yobushushu ehambelana namandla.
Izihlanganisi kumacala omabini ziqhagamshelwe kwi-cavity ngeentambo, kwaye uqhagamshelo phakathi kwesihlanganisi kunye nepleyiti yokuncitshiswa kwe-microstrip ejikelezayo lwenziwa ngephini ye-elastic, enxibelelana ne-elastic nesiphelo sepleyiti yokuncitshiswa.
I-Rotary microstrip attenuator yimveliso eneempawu eziphezulu ze-frequency phakathi kwazo zonke iitships, kwaye lolona khetho luphambili lokwenza ii-high-frequency attenuators.
Umgaqo osebenzayo we-microstrip attenuator usekelwe kakhulu kwindlela yokusebenza yokunciphisa isignali. Inciphisa imiqondiso ye-microwave ngexesha lokudluliselwa kwi-chip ngokukhetha izixhobo ezifanelekileyo kunye nokuyila izakhiwo. Ngokubanzi, ii-attenuation chips zisebenzisa iindlela ezifana nokufunxa, ukusasaza, okanye ukubonakalisa ukuze kufezekiswe ukuncitshiswa. Ezi ndlela zinokulawula ukuncitshiswa kunye nempendulo ye-frequency ngokulungelelanisa iiparameter zezinto ze-chip kunye nesakhiwo.
Ulwakhiwo lwe-microstrip attenuators ludla ngokuba nemigca yokudlulisela i-microwave kunye neenethiwekhi zokulinganisa i-impedance. Imigca yokudlulisela i-microwave ziitshaneli zokudlulisela isignali, kwaye izinto ezifana nokulahleka kokudlulisela kunye nokulahleka kokubuya kufuneka ziqwalaselwe kuyilo. Inethiwekhi yokulinganisa i-impedance isetyenziselwa ukuqinisekisa ukuncitshiswa ngokupheleleyo kwesignali, okubonelela ngomlinganiselo ochanekileyo wokunciphisa.
Ubungakanani bokunciphisa kwe-microstrip attenuator esibonelela ngayo buzinzile kwaye abuguquguquki, kwaye bunozinzo nokuthembeka, obungasetyenziswa kwiimeko apho ukulungiswa rhoqo kungadingeki. Ii-fixed attenuators zisetyenziswa kakhulu kwiinkqubo ezifana ne-radar, unxibelelwano lwesathelayithi, kunye nokulinganisa i-microwave.