Amandla alinganisiweyo: 2-30W;
Izinto zeSubstrate: BeO, AlN, Al2O3
Ixabiso eliqhelekileyo lokuxhathisa: 100 Ω (10-3000 Ω ngokuzithandela)
Ukunyamezela ukunyamezela: ± 5%, ± 2%, ± 1%
I-coefficient yobushushu: < 150ppm/℃
Ubushushu bokusebenza: -55~+150 ℃
Umgangatho we-ROHS: Iyahambelana
Umgangatho osebenzayo: Q/RFTYTR001-2022
Amandla (W) | Ubungakanani (iyunithi: mm) | I-Substrate Material | Uqwalaselo | Icwecwe leDatha(PDF) | ||||
A | B | C | D | H | ||||
2 | 2.2 | 1.0 | 0.5 | N / A | 0.4 | BeO | UmfanekisoB | RFTXX-02CR1022B |
5.0 | 2.5 | 1.25 | N / A | 1.0 | AlN | UmfanekisoB | RFTXXN-02CR2550B | |
3.0 | 1.5 | 0.3 | 1.5 | 0.4 | AlN | UmfanekisoC | RFTXXN-02CR1530C | |
6.5 | 3.0 | 1.00 | N / A | 0.6 | Al2O3 | UmfanekisoB | RFTXXA-02CR3065B | |
5 | 2.2 | 1.0 | 0.4 | 0.6 | 0.4 | BeO | UmfanekisoC | RFTXX-05CR1022C |
3.0 | 1.5 | 0.3 | 1.5 | 0.38 | AlN | UmfanekisoC | RFTXXN-05CR1530C | |
5.0 | 2.5 | 1.25 | N / A | 1.0 | BeO | UmfanekisoB | RFTXX-05CR2550B | |
5.0 | 2.5 | 1.3 | 1.0 | 1.0 | BeO | UmfanekisoC | RFTXX-05CR2550C | |
5.0 | 2.5 | 1.3 | N / A | 1.0 | BeO | UmfanekisoW | RFTXX-05CR2550W | |
6.5 | 6.5 | 1.0 | N / A | 0.6 | Al2O3 | UmfanekisoB | RFTXXA-05CR6565B | |
10 | 5.0 | 2.5 | 2.12 | N / A | 1.0 | AlN | UmfanekisoB | RFTXXN-10CR2550TA |
5.0 | 2.5 | 2.12 | N / A | 1.0 | BeO | UmfanekisoB | RFTXX-10CR2550TA | |
5.0 | 2.5 | 1.0 | 2.0 | 1.0 | AlN | UmfanekisoC | RFTXXN-10CR2550C | |
5.0 | 2.5 | 1.0 | 2.0 | 1.0 | BeO | UmfanekisoC | RFTXX-10CR2550C | |
5.0 | 2.5 | 1.25 | N / A | 1.0 | BeO | UmfanekisoW | RFTXX-10CR2550W | |
20 | 5.0 | 2.5 | 2.12 | N / A | 1.0 | AlN | UmfanekisoB | RFTXXN-20CR2550TA |
5.0 | 2.5 | 2.12 | N / A | 1.0 | BeO | UmfanekisoB | RFTXX-20CR2550TA | |
5.0 | 2.5 | 1.0 | 2.0 | 1.0 | AlN | UmfanekisoC | RFTXXN-20CR2550C | |
5.0 | 2.5 | 1.0 | 2.0 | 1.0 | BeO | UmfanekisoC | RFTXX-20CR2550C | |
5.0 | 2.5 | 1.25 | N / A | 1.0 | BeO | UmfanekisoW | RFTXX-20CR2550W | |
30 | 5.0 | 2.5 | 2.12 | N / A | 1.0 | BeO | UmfanekisoB | RFTXX-30CR2550TA |
5.0 | 2.5 | 1.0 | 2.0 | 1.0 | AlN | UmfanekisoC | RFTXX-30CR2550C | |
5.0 | 2.5 | 1.25 | N / A | 1.0 | BeO | UmfanekisoW | RFTXX-30CR2550W | |
6.35 | 6.35 | 1.0 | 2.0 | 1.0 | BeO | UmfanekisoC | RFTXX-30CR6363C |
I-Chip Resistor, eyaziwa ngokuba yi-Surface Mount Resistor, isetyenziswa ngokubanzi kwizixhobo zombane kunye neebhodi zesekethe.Into ephambili yayo kukuba ifakwe ngokuthe ngqo kwibhodi yesekethe ngokusebenzisa iteknoloji ye-surface Mount (SMD), ngaphandle kwesidingo se-perforation okanye i-soldering of pins.
Xa kuthelekiswa nabaxhathisi bemveli, i-resistors ye-chip eveliswa yinkampani yethu ineempawu zobukhulu obuncinci kunye namandla aphezulu, okwenza uyilo lweebhodi zesekethe zihlangane ngakumbi.
Izixhobo ezizenzekelayo zingasetyenziselwa ukunyuswa, kwaye izichasi ze-chip zinomgangatho ophezulu wemveliso kwaye zinokuveliswa ngobuninzi, zizenze zilungele ukwenziwa kwezinto ezinkulu.
Inkqubo yokuvelisa inokuphindaphinda okuphezulu, okunokuqinisekisa ukuhambelana kwenkcazo kunye nokulawula umgangatho olungileyo.
Izichasi ze-chip zine-inductance ephantsi kunye ne-capacitance, zizenza zigqwese kugqithiso lwesignali ye-frequency ephezulu kunye nokusetyenziswa kweRF.
Ukudityaniswa kwe-welding ye-resistors ze-chip kukhuseleke ngakumbi kwaye kuncinci kuthintelo loxinzelelo lomatshini, ngoko ke ukuthembeka kwabo kuhlala kuphezulu kunoko kwe-plug-in resistors.
Isetyenziswa kakhulu kwizixhobo zombane ezahlukeneyo kunye neebhodi zesekethe, kubandakanya izixhobo zonxibelelwano, izixhobo zekhompyuter, i-elektroniki yabathengi, i-automotive electronics, njl.
Xa ukhetha izichasi zetshiphu, kuyafuneka ukuba kuqwalaselwe iinkcukacha ezinje ngexabiso loxhathiso, amandla okuchitha amandla, ukunyamezelana, umlinganiselo wobushushu, kunye nohlobo lokupakisha ngokweemfuno zesicelo.